october 2013 fqd13n06l / FQU13N06L n-channel qfet ? mosfet 60 v, 11 a, 115 m? description fqd13n06l / FQU13N06L n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 1 this n-channel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior s witching performance and high avalanche energy s trength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and v ariable switching power applications. features g d s i-pak d-pak g s d g s d absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter fqd13n06ltm FQU13N06Ltu FQU13N06Ltu_ws unit r ? jc thermal resistance, junction to case, max. 4.5 o c/w r ? ja thermal resistance, j unction to ambi ent ( minimum pad of 2-oz copper), max. 110 thermal resistance, junction to ambient (*1 in 2 pad of 2-oz copper), max. 50 ? 11 a, 60 v, r ds(on) = 115 m? (max) @ v gs = 10 v, i d = 5.5 a ? low gate charge (typ. 4.8 nc) ? low crss (typ. 17 pf) ? 100% avalanche tested ? low level gate drive requirements allowing direct operation form logic drivers symbol parameter fqd13n06ltm / FQU13N06Ltu FQU13N06Ltu_ws unit v dss drain-source voltage 60 v i d drain current - continuous (t c = 25c) 11 a - continuous (t c = 100c) a 7 i dm drain current - pulsed (note 1) 44 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 90 mj i ar avalanche current (note 1) 11 a e ar repetitive avalanche energy (note 1) 2.8 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 28 w - derate above 25c 0.22 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature f or soldering, 1/8" from case for 5 seconds 300 c
package marking and ordering information part number top mark package reel size tape width quantity fqd13n06l fqd13n06ltm d-pak 330 mm 16 mm 2500 units fqd13n06l / FQU13N06L n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 2 1. repetitive rating : p ulse- width limited by m aximum junction temperature. 2. l = 870 h, i as = 11 a, v dd = 25 v, r g = 25 ?, starting t j = 25 o c. 3. i sd 13.6 a, di/dt 300 a/s, v dd bv dss , s tarting t j = 25 o c. 4. es s entially independent of operating temperature . packing method tape and reel FQU13N06L FQU13N06Ltu i-pak n/a n/a 70 units tube electrical characteristics t c = 25 o c unless otherwise noted. FQU13N06Ls FQU13N06Ltu_ws i-pak n/a n/a 75 units tube symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.05 -- v/c i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 a v ds = 48 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1.0 -- 2.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a v gs = 5 v, i d = 5.5 a -- -- 0.092 0.115 0.115 0.145 ? g fs forward transconductance v ds = 25 v, i d = 5.5 a -- 6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 270 350 pf c oss output capacitance -- 95 125 pf c rss reverse transfer capacitance -- 17 23 pf switching characteristics t d(on) turn-on delay time v dd = 30 v, i d = 6.8 a, r g = 25 ? -- 8 25 ns t r turn-on rise time -- 90 190 ns t d(off) turn-off delay time -- 20 50 ns t f turn-off fall time -- 40 90 ns q g total gate charge v ds = 48 v, i d = 13.6 a, v gs = 5 v -- 4.8 6.4 nc q gs gate-source charge -- 1.6 -- nc q gd gate-drain charge -- 2.7 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 11 a i sm maximum pulsed drain-source diode forward current -- -- 44 a v sd drain-source diode forward voltage v gs = 0 v, i s = 11 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 13.6 a, di f / dt = 100 a/ s -- 45 -- ns q rr reverse recovery charge -- 45 -- nc (n ote 4) (note 4)
fqd13n06l / FQU13N06L n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 3 ! 2 0 6 4 81 0 0 2 4 6 8 10 12 v ds = 30v v ds = 48v not e : i d = 13.6a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 c iss = c gs + c gd (c ds = shorted) c gd ds c oss = c + c gd c rss = notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 0 1 2 03 04 0 0 100 200 300 v gs = 10v v gs = 5v not e : t j = 25 r ds(on) [m ], drain-source on-resistance i d , drain current [a] 024681 0 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = 25v 2. 250 s pulse test i d , drain current [a] 10 -1 10 0 10 1 10 0 10 1 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature v gs , gate-source voltage [v] figure 2. transfer characteristics v ds , drain-source voltage [v] figure 1. on-region characteristics
fqd13n06l / FQU13N06L n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 4 !
z ? jc (t), thermal response [ o c/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 notes : 1 . z jc =(t) 4.5 /w m a x. 2 . d u t y f a c t o r , d = t 1 /t 2 3 . t jm - t c = p dm z* jc (t) sin g le p u ls e d=0.5 0.02 0.2 0.05 0.1 0.01 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limit ed by r ds(on) not es : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 5.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature t 1 , rec tangular p ulse d uration [sec] figure 11. transient t hermal response curve t 1 p dm t 2
figure 12. gate charge test circuit & waveform f igure 13 . resistive switc hing test circuit & waveforms figure 14 . unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const. ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 5 fqd13n06l / FQU13N06L n-channel qfet ? mosfet
f igure 15. pe ak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fqd13n06l / FQU13N06L n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 6
?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 7 fqd13n06l / FQU13N06L n-channel qfet ? mosfet mechanical dimensions figure 16. to252 (d-pak), molded, 3-lead, option aa&ab package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-003
FQU13N06Ltu ?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 8 fqd13n06l / FQU13N06L n-channel qfet ? mosfet mechanical dimensions figure 17. to251 (i-pak), molded, 3-lead package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to251-003
?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 9 fqd13n06l / FQU13N06L n-channel qfet ? mosfet mechanical dimensions figure 18. to-251 (i-pak), molded, 3-lead, option aa package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt251-003 FQU13N06Ltu_ws
?2000 fairchild semiconductor corporation fqd13n06l / FQU13N06L rev. c3 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterfeiting policy. fairchilds anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair childs quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ? fqd13n06l / FQU13N06L n-channel qfet ? mosfet
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